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mitsubishi rf mosfet module ra01l8693ma rohs compliance , 865-928mhz 1.4w 3.3v, 2 stage amp. for rfid reader / writer ra01l8693ma mitsubishi electric 21 th nov. 2008 1/13 electrostatic sensitive device observe handling precautions description the ra01l8693ma is a 1.4-watt rf mosfet amplifier module. the battery can be connected dire ctly to the drain of the enhancement-mode mosfet transistors. the output power and drain current increase as the gate voltage increases. with a gate voltage around 0.5v (minimum), output power and drain current increases substantially. the nominal output power becomes available at 1.5v (typical) and 2.0v (maximum). at v gg =2.0v, the typical gate current is 1ma. features ? enhancement-mode mosfet transistors (i dd ? 0 @ v dd =3.3v, v gg =0v) ? p out >1.4w, t >38% @ v dd =3.3v, v gg =2.0v, p in =30mw ? broadband frequency range: 865-928mhz ? low-power control current i gg =1ma (typ) at v gg =2.0v ? module size: 9.1 x 9.2 x 1.8 mm rohs compliance ? ra01l8693ma -101 is a rohs compliance products. ? rohs compliance is indicate by the letter ?g? after the lot marking. ? this product include the lead in the glass of electronic parts and the lead in electronic ceramic parts. how ever ,it is applicable to the following ex ceptions of rohs directions. 1.lead in the glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.lead in electronic ceramic parts. ordering information: order number supply form ra01l8693ma -101 antistatic tray, 25 modules/tray block diagram 1 rf input (p in ) 2 gate voltage (v gg ), power control 3 drain voltage (v dd ), battery 4 rf output (p out ) 5 rf ground 3 2 4 1 5 package code: h58
mitsubishi rf power module rohs compliant ra01l8693ma ra01l8693ma mitsubishi electric 21 th nov. 2008 2/13 electrostatic sensitive device observe handling precautions maximum ratings (t case =+25deg.c. unless otherwise specified) symbol parameter conditions rating unit v dd drain voltage v gg <2.0v, z g =z l =50ohm 6 v v gg gate voltage v dd <3.3v, p in =0mw, z g =z l =50ohm 3 v p in input power 50 mw p out output power 3 w t case(op) operation case temperature range f=865-928mhz, v gg <2.0v z g =z l =50ohm -30 to +90 c t stg storage temperature range -40 to +110 c the above parameters ar e independently guaranteed. electrical characteristics (t case =+25 c , z g =z l =50 ? , unless otherwise specified) symbol parameter conditions min typ max unit f frequency range 865 928 mhz p out output power 1.4 w t total efficiency 38 % 2f o 2 nd harmonic -30 dbc in input vswr v dd =3.3v v gg =2.0v p in =30mw 4.4:1 ? p out (2) output power v dd =5.0v,v gg =2.0v, p in =30mw 2 w t (2) total efficiency v dd =5.0v p in =30mw,p out =2w (v gg control) 35 % ? stability v dd =2.5/3.3/6.0v, v gg =0.5-2.0v, p in =20-50mw , po<2.5w zg=50ohm, load vswr=4:1 no parasitic oscillation ? ? load vswr tolerance v dd =6.0v, p in =30mw, p out =2w (v gg control), zg=50ohm, load vswr=20:1 no degradation or destroy ? all parameters, conditions, ratings, and limit s are subject to change without notice.
mitsubishi rf power module rohs compliant ra01l8693ma ra01l8693ma mitsubishi electric 21 th nov. 2008 3/13 electrostatic sensitive device observe handling precautions typical performance (vdd=3.3v,t case =+25deg.c, z g =z l =50 ? , unless otherwise specified)
mitsubishi rf power module rohs compliant ra01l8693ma ra01l8693ma mitsubishi electric 21 th nov. 2008 4/13 electrostatic sensitive device observe handling precautions typical performance (t case =+25deg.c, z g =z l =50 ? , unless otherwise specified)
mitsubishi rf power module rohs compliant ra01l8693ma ra01l8693ma mitsubishi electric 21 th nov. 2008 5/13 electrostatic sensitive device observe handling precautions typical performance (vdd=5.0v,t case =+25deg.c, z g =z l =50 ? , unless otherwise specified)
mitsubishi rf power module rohs compliant ra01l8693ma ra01l8693ma mitsubishi electric 21 th nov. 2008 6/13 electrostatic sensitive device observe handling precautions outline drawing ( mm ) 1 rf input (p in ) 2 gate voltage (v gg ) 3 drain voltage (v dd ) 4 rf output (p out ) 5 rf ground */%&9."3, 1jo
? ?? ? ? 1 rf input (p in ) 2 gate voltage (v gg ) 3 drain voltage (v dd ) 4 rf output (p out ) 5 rf ground (case)
mitsubishi rf power module rohs compliant ra01l8693ma ra01l8693ma mitsubishi electric 21 th nov. 2008 7/13 electrostatic sensitive device observe handling precautions 1 rf input (p in ) 2 gate voltage (v gg ) 3 drain voltage (v dd ) 4 rf output (p out ) 5 rf ground c1, c2: 4700pf, 22uf in parallel directional coupler attenuator power meter spectrum analyzer signal generator attenuator pre- amplifier power meter directional coupler z g =50 ? ? c1 - + dc power supply v gg c2 + - dc power supply v dd test block diagram attenuator equivalent circuit dut 5 1 4 3 2
mitsubishi rf power module rohs compliant ra01l8693ma ra01l8693ma mitsubishi electric 21 th nov. 2008 8/13 electrostatic sensitive device observe handling precautions precautions, recommendations, and application information: construction: this module consists of an alumina subs trate. for mechanical protection, a metal cap is attached (witch makes the improvement of rf radiation easy). the mosfet trans istor chips are die bonded onto the substrate, wire bonded to the substrate, and coated with resin. lines on the substr ate (eventually inductors), ch ip capacitors, and resistors form the bias and matching circuits. the dc and rf c onnection is provided at the backside of substrate. following conditions must be avoided: a) bending forces on the alumina substrate (for example, by fast thermal changes) b) defluxing solvents reacting with the resin coating on the mosfet chip s (for example, trichloroethylene) c) frequent on/off switching that caus es thermal expansion of the resin d) esd, surge, over voltage in comb ination with load vswr, and oscillation esd: this mosfet module is sensitive to esd voltages down to 1000v. appropria te esd precautions are required. thermal design of the heat sink: at p out =1.4w, v dd =3.3v and p in =30mw each stage transistor operating conditions are: stage p in (w) p out (w) r th(ch-case) (c/w) i dd @ t =38% (a) v dd (v) 1 st 0.03 0.3 57.2 0.115 2 nd 0.3 1.4 7.6 1.00 3.3 the channel temperatures of each stage transistor t ch = t case + (v dd x i dd - p out + p in ) x r th(ch-case) are: t ch1 = t case + (3.3v x 0.115a ? 0.3w + 0.03w) x 57.2c/w = t case + 6.3 c t ch2 = t case + (3.3v x 1.0a ? 1.4w + 0.3w) x 7.6c/w = t case + 16.7 c for long-term reliability, it is best to keep the module case temperature (t case ) below 70c. for an ambient temperature t air =45c and p out =1.4w, the required thermal resistance r th (case-air) = ( t case - t air ) / ( (p out / t ) - p out + p in ) of the heat sink, including the contact resistance, is: r th(case-air) = (70c - 45c) / (1.4w/38% ? 1.4w + 0.03w) = 10.8c/w when mounting the module with the thermal resistance of 10.8c/w, the channel temperature of each stage transistor is: t ch1 = t air + 31.3 c t ch2 = t air + 41.7 c the 175c maximum rating for the channel temperat ure ensures application under derated conditions.
mitsubishi rf power module rohs compliant ra01l8693ma ra01l8693ma mitsubishi electric 21 th nov. 2008 9/13 electrostatic sensitive device observe handling precautions output power control: the recommended method to control the output power is by the input power (pin). oscillation: to test rf characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pf chip capacitor, located close to t he module, and a 22 f (or more) electrolytic capacitor. when an amplifier circuit around this module show s oscillation, the following may be checked: a) do the bias decoupling capacitors have a lo w inductance pass to the case of the module? b) is the load impedance z l =50 ? c) is the source impedance z g =50 ? frequent on/off switching: in base stations, frequent on/off switchi ng can cause thermal expansion of the re sin that coats the transistor chips and can result in reduced or no output power. the bond wire s in the resin will break after long-term thermally induced mechanical stress. quality: mitsubishi electric is not liable for failures resulting from base station operation time or operating conditions exceeding those of rfid reader / writer. this module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios. currently, most returned modules show failure s such as esd, substrate crack, and transistor burnout, which are caused by improper handling or exceeding recommended operating conditions. few degradation failures are found.
mitsubishi rf power module rohs compliant ra01l8693ma ra01l8693ma mitsubishi electric 21 th nov. 2008 10/13 electrostatic sensitive device observe handling precautions p.c.b land pattern recommendation mounting method mitsubishi recommends device mounting like fig.1. in order to heat radiation, we recommend to fix the pcb and heat sink by screw. this pcb has through holes that filled up with resin to restrain the solder flow under the rf ground. the interval of through holes is 0.4mm and these holes are arranged in the shape of equilateral triangles. # note: mitsubishi heat sink size=30 * 60 * 10 unit: mm ? equilateral triangle arrangement through hole ? ? ? ? reflow soldering heat sink fig.1 rf ground drain rf output printed circuit board fix with screws. rf input gate
mitsubishi rf power module rohs compliant ra01l8693ma ra01l8693ma mitsubishi electric 21 th nov. 2008 11/13 electrostatic sensitive device observe handling precautions reflow soldering regarding to reflow soldering, mitsubishi recommend the heat profile of fig.2. reflow soldering is able to do till 3 times. fig.2 1fbl?."9 tfdnby bcpwf? tfdnby ?? ?ytfd 5jnf tfd
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mitsubishi rf power module rohs compliant ra01l8693ma ra01l8693ma mitsubishi electric 21 th nov. 2008 12/13 electrostatic sensitive device observe handling precautions precautions for the use of mitsubis hi silicon rf power amplifier devices 1. the specifications of mention are not guarantee values in this data sheet. please confirm additional details regarding operation of these products from the formal specification sheet. for copi es of the formal specific ation sheets, please contact one of our sales offices. 2.ra series products (rf power amplif ier modules) and rd series pr oducts (rf power transistors ) are designed for consume r mobile communication terminals and were not specifically designed for use in other app lications. in particular, while these products are highly reliable for their designed purpose, they are not manufactu red under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typi cally deemed necessary for critical communications elements. examples of critical communications elements would include transmitters for bas e station applications and fixed station applications that operate with long te rm continuous transmission and a higher on- off frequency during transmitting, especiall y for systems that may have a high impact to society. 3.ra series and rd series pr oducts use mosfet semiconducto r technology. they are sensitive to esd voltage therefore appropriate esd precautions are required. 4.in the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated o r destroyed due to the rf-swing exceed the breakdown voltage. 5.in order to maximize reliability of the equipment, it is bette r to keep the devices temperature low. it is recommended to ut ilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the case temperature fo r ra series products lower than 60deg/c under standard c onditions, and less than 90deg/c under extreme conditions. 6.ra series products are designed to operat e into a nominal load impedance of 50 ohms. under the condition of operating into a severe high load vswr approaching an open or s hort, an over load condition could occur. in the worst case there is risk fo r burn out of the transistors and burning of other parts including the substrate in the module. 7.the formal specification includes a guarantee against parasitic oscillation under a specified maximum load mismatch condition. the inspection fo r parasitic oscillation is performed on a sample basis on our manufacturing line. it is recommended that verification of no parasitic oscillation be performed at the completed equipment level also. 8.for specific precautions regarding assemb ly of these products into the equipment, please refer to the supplementary items in the specification sheet. 9.warranty for the product is void if the pr oducts protective cap (lid) is removed or if the product is modified in any way fro m it?s original form. 10.for additional ?safety first? in your ci rcuit design and notes regarding the materials, please refer the last page of this d ata sheet. 11. please refer to the additional precauti ons in the formal specification sheet. do not use the device at the exceeded the maximum rating condition. in case of pl astic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resi n due to extreme short current flow between the drain and the source of the device. thes e results causes in fire or injury. warning !
mitsubishi rf power module rohs compliant ra01l8693ma ra01l8693ma mitsubishi electric 21 th nov. 2008 13/13 electrostatic sensitive device observe handling precautions mitsubishi electric corporation puts the ma ximum effort into making semiconductor pr oducts better and more reliable, but there is always the possibility that trouble may occur with them. tr ouble with semiconductors may l ead to personal injury, fire o r property damage. remember to give due consideration to safety when making your circuit desi gns, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammabl e material or (iii) prevention against an y malfunction or mishap. keep safety first in your circuit designs ! - these materials are intended as a reference to assist our cu stomers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property rights, or any other right s, belonging to mitsubishi electric corporation or a third party. - mitsubishi electric corporation assumes no responsibility for any damage, or infringem ent of any third-party?s rights, origin ating in the use of any product data, diagrams, char ts, programs, algorithms, or circuit applic ation examples contai ned in these materia ls. - all information contained in these mate rials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of pub lication of these materials, and are subjec t to change by mitsubishi electric corpora tion without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubishi electric corporation or an authorized mits ubishi semiconductor product distributor fo r the latest product information before purchasing a product listed herein. the info rmation described here may contain technica l inaccuracies or typographical errors. mitsubishi electric corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuraci es o r errors. please also pay attention to info rmation published by mitsubishi electric co rporation by various means, including the mitsubishi semiconductor home page (h ttp://www. mitsubishichips.com). - when using any or all of the informati on contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. mitsubishi electr ic corporation assumes no responsibilit y for any damage, liability or other loss resulting from the information contained herein. - mitsubishi electric corporati on semiconductors are not designed or manufactured for use in a device or system that is used un de r circumstances in which human life is potentially at stake. pl ease contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product di stributor when considering the use of a produc t contained herein for any specific purposes, such as apparatus or systems for transportation, vehicula r, medical, aerospace, nucl ear, or undersea repeater use. - the prior written approval of mitsubishi el ectric corporation is necessary to reprin t or reproduce in whole or in part these materials. - if these products or technologi es are subject to the japanese export control restrictions, they must be exported under a lice nse from the japanese government and cannot be imported in to a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. - please contact mitsubishi elec tric corporation or an authorized mitsubishi se miconductor product distri butor for further deta ils on these materials or the pr oducts contained therein. notes regarding these

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